Figure of merit based maximization of the quantum efficiency of (single-wall-carbon-nanotubes/n-type silicon) hybrid photovoltaic devices

V. Le Borgne, L. A. Gautier, and M. A. El Khakani

We report on a rational approach to optimize the photovoltaic (PV) properties of devices based on the hetero-nanojunctions formed between single wall carbon nanotubes (SWCNTs) films and n-silicon. By qualifying the optoelectronic properties of the SWCNT film through a figure of merit (FoM), we wer ... [Appl. Phys. Lett. 103, 073103 (2013)] published Mon Aug 12, 2013.



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