Ultrathin YSi2 nanowires were grown epitaxially on the Si(110) surface. High-aspect-ratio nanowire growth is induced by the strongly anisotropic lattice-match between the silicide crystal lattice and the Si(110) surface, similar to the established formation of rare-earth silicide nanowires on Si(1 ... [Appl. Phys. Lett. 103, 073101 (2013)] published Mon Aug 12, 2013.
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