An undoped single GaAs nanowire (NW) photodetector based on a metal–semiconductor–metal Schottky diode structure is fabricated by a focused ion beam method. The photoconductive gain of the device reaches 20 000 at low laser excitation. Bias-dependence of gain proves that the surface contributes mo ... [Appl. Phys. Lett. 103, 093101 (2013)] published Mon Aug 26, 2013.
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