Laterally self-ordered silicon-germanium islands with optimized confinement properties

Thomas Zabel, Narayan Sircar, and Norman Hauke et al.

We present an analysis of the electronic confinement properties of self-assembled islands forming via silicon and germanium co-deposition in molecular beam epitaxy. This approach allows the fabrication of laterally self-ordered three dimensional islands in the Stranski-Krastanow growth mode. Using ... [Appl. Phys. Lett. 103, 063105 (2013)] published Thu Aug 08, 2013.



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