Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers

Jiadan Lin, Jianqiang Zhong, and Shu Zhong et al.

In situ bottom-gated molybdenum disulfide (MoS2) field effect transistors (FETs) device characterization and in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy measurements were combined to investigate the effect of surface modification layers of C60 and molybdenum ... [Appl. Phys. Lett. 103, 063109 (2013)] published Fri Aug 09, 2013.



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