Optimization of HfO2 films for high transconductance back gated graphene transistors

Kolla Lakshmi Ganapathi, Navakanta Bhat, and Sangeneni Mohan

Hafnium dioxide (HfO2) films, deposited using electron beam evaporation, are optimized for high performance back-gated graphene transistors. Bilayer graphene is identified on HfO2/Si substrate using optical microscope and subsequently confirmed with Raman spectroscopy. Back-gated graphene transist ... [Appl. Phys. Lett. 103, 073105 (2013)] published Tue Aug 13, 2013.



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