Pi-gate tunneling field-effect transistor charge trapping nonvolatile memory based on all tunneling transportation

Yi-Ruei Jhan, Yung-Chun Wu, and Hsin-Yi Lin et al.

This work demonstrates the feasibility of a charge-trapping nonvolatile memory based on Pi-gate polycrystalline silicon tunneling field-effect transistor, which has a silicon-oxide-nitride-oxide-silicon structure. Both the conducting current and the program/erase operations are based on quantum tu ... [Appl. Phys. Lett. 103, 053118 (2013)] published Thu Aug 01, 2013.



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