Thursday, August 15, 2013

Polarization effects due to thickness fluctuations in nonpolar InGaN/GaN quantum wells

Oliver Marquardt, Tilmann Hickel, and Jörg Neugebauer et al.

We have employed continuum elasticity theory and an eight band k·p model to study the influence of thickness fluctuations in In0.2Ga0.8N quantum wells grown along the [110] direction in GaN. Such fluctuations are the origin of polarization potentials that may spatially separate electrons and holes ... [Appl. Phys. Lett. 103, 073115 (2013)] published Thu Aug 15, 2013.



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