Nanoscale , 2013, Accepted Manuscript
DOI: 10.1039/C3NR03220E, Communication
DOI: 10.1039/C3NR03220E, Communication
Mei Yin Chan, Katsuyoshi Komatsu, Songlin Li, Yong Xu, Peter Darmawan, Hiromi Kuramochi, Nakaharai Shu, Alex Aparecido Ferreira, Kenji Watanabe, Takashi Taniguchi, Kazuhito Tsukagoshi
The carrier mobility of the atomically thin MoS2 field-effect transistors shows a suppression of thermally activated transport on h-BN substrates.
The content of this RSS Feed (c) The Royal Society of Chemistry
The carrier mobility of the atomically thin MoS2 field-effect transistors shows a suppression of thermally activated transport on h-BN substrates.
The content of this RSS Feed (c) The Royal Society of Chemistry
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