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Deep Jariwala, Vinod K. Sangwan, and Dattatray J. Late et al.
Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low le ... [Appl. Phys. Lett. 102, 173107 (2013)] published Wed May 01, 2013.
Link to full article
Deep Jariwala, Vinod K. Sangwan, and Dattatray J. Late et al.
Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low le ... [Appl. Phys. Lett. 102, 173107 (2013)] published Wed May 01, 2013.
Link to full article
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