Wednesday, May 01, 2013

Band-like transport in high mobility unencapsulated single-layer MoS2 transistors

(author unknown)



Deep Jariwala, Vinod K. Sangwan, and Dattatray J. Late et al.

Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low le ... [Appl. Phys. Lett. 102, 173107 (2013)] published Wed May 01, 2013.



Link to full article

No comments:

Post a Comment