Nanoscale , 2013, Accepted Manuscript
DOI: 10.1039/C3NR02552G, Communication
DOI: 10.1039/C3NR02552G, Communication
Jae-Hyun Lee, Byung-Sung Kim, Soon-Hyung Choi, Yamujin Jang, Sungwoo Hwang, Dongmok Whang
We demonstrate a facile fabrication of high performance gate-all-around (GAA) field effect transistors (FET) based on concentric Si/SiO2/N++Si core/multi-shell nanowires.
The content of this RSS Feed (c) The Royal Society of Chemistry
We demonstrate a facile fabrication of high performance gate-all-around (GAA) field effect transistors (FET) based on concentric Si/SiO2/N++Si core/multi-shell nanowires.
The content of this RSS Feed (c) The Royal Society of Chemistry
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