Nanoscale , 2013, Accepted Manuscript
DOI: 10.1039/C3NR03045H, Paper
DOI: 10.1039/C3NR03045H, Paper
Fang-Wei Yuan, Chiu-Yen Wang, Guo-An Li, Shu-Hao Chang, Li-Wei Chu, Lih J Chen, Hsing-Yu Tuan
Single-crystal Cu3Si nanowire arrays on either rigid or flexible substrates were synthesized at 420 to 475 [degree]C, 10.3 Mpa in supercritical benzene, demonstrating the first example of solution-phase growth of metal silicide nanowires. The solution-grown Cu3Si nanowires have dual functions as superior field emitters and efficient anti-reflective layers.
The content of this RSS Feed (c) The Royal Society of Chemistry
Single-crystal Cu3Si nanowire arrays on either rigid or flexible substrates were synthesized at 420 to 475 [degree]C, 10.3 Mpa in supercritical benzene, demonstrating the first example of solution-phase growth of metal silicide nanowires. The solution-grown Cu3Si nanowires have dual functions as superior field emitters and efficient anti-reflective layers.
The content of this RSS Feed (c) The Royal Society of Chemistry
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