Nanoscale , 2013, Accepted Manuscript
DOI: 10.1039/C3NR03080F, Paper
DOI: 10.1039/C3NR03080F, Paper
Zaixing Yang, Ning Han, Fengyun Wang, Ho-Yuen Cheung, Xiaoling Shi, Sen-Po Yip, T. F. Hung, Min Hyung Lee, Chun-Yuen Wong, Johnny C Ho
Due to the unique physical properties, small bandgap III-V semiconductor nanowires such as InAs and InSb have been extensively studied for the next-generation high-speed and high-frequency electronics. However, further CMOS...
The content of this RSS Feed (c) The Royal Society of Chemistry
Due to the unique physical properties, small bandgap III-V semiconductor nanowires such as InAs and InSb have been extensively studied for the next-generation high-speed and high-frequency electronics. However, further CMOS...
The content of this RSS Feed (c) The Royal Society of Chemistry
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