Wednesday, May 01, 2013

Bandgap engineering of rippled MoS2 monolayer under external electric field

(author unknown)



Jingshan Qi, Xiao Li, and Xiaofeng Qian et al.

In this letter we propose a universal strategy combining external electric field with the ripple of membrane to tune the bandgap of semiconducting atomic monolayer. By first-principles calculations we show that the bandgap of rippled MoS2 monolayer can be tuned in a large range by vertical externa ... [Appl. Phys. Lett. 102, 173112 (2013)] published Wed May 01, 2013.



Link to full article

No comments:

Post a Comment