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Matin Amani, Matthew L. Chin, and A. Glen Birdwell et al.
Molybdenum disulfide (MoS2) field effect transistors (FET) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition. The layer qualities and physical properties were characterized using high-resolution Raman and photoluminescence spectroscopy, scanning elect ... [Appl. Phys. Lett. 102, 193107 (2013)] published Thu May 16, 2013.
Link to full article
Matin Amani, Matthew L. Chin, and A. Glen Birdwell et al.
Molybdenum disulfide (MoS2) field effect transistors (FET) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition. The layer qualities and physical properties were characterized using high-resolution Raman and photoluminescence spectroscopy, scanning elect ... [Appl. Phys. Lett. 102, 193107 (2013)] published Thu May 16, 2013.
Link to full article
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